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Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

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4 Author(s)
Tavernier, P.R. ; Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, California 93106-5050 ; Etzkorn, E.V. ; Wang, Y. ; Clarke, D.R.

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The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH3 at 550 °C and annealed at a growth temperature of 1050 °C, thick films of GaN can be grown by HVPE with fewer than 108 dislocations per cm2. Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that ∼23 μm films have dislocation densities of ∼6×107cm-2. Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 12 )

Date of Publication:

Sep 2000

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