Cart (Loading....) | Create Account
Close category search window

Two-step growth of high-quality GaN by hydride vapor-phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Tavernier, P.R. ; Materials Department, College of Engineering, University of California, Santa Barbara, Santa Barbara, California 93106-5050 ; Etzkorn, E.V. ; Wang, Y. ; Clarke, D.R.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The use of a low-temperature layer of GaN formed by hydride vapor-phase epitaxy (HVPE) as a template to grow high-quality HVPE films is demonstrated. Using layers formed by reacting GaCl and NH3 at 550 °C and annealed at a growth temperature of 1050 °C, thick films of GaN can be grown by HVPE with fewer than 108 dislocations per cm2. Dislocation densities measured by high-resolution x-ray diffraction, atomic-force microscopy step termination density and plan-view transmission electron miscroscopy reveal that ∼23 μm films have dislocation densities of ∼6×107cm-2. Obtaining high-quality single-crystal character films was found to be dependent on several factors, most importantly, the rate of temperature increase to growth temperature and the layer thickness. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 12 )

Date of Publication:

Sep 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.