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We have demonstrated thin-film vertical-cavity surface-emitting lasers (VCSELs) on a selected substrate for the hybrid integration of optoelectronic devices. After fabricating VCSEL structures, the epitaxial side of the VCSEL wafer was bonded onto an AlN substrate using Au–Sn solder, and then the growth substrate of the wafer was removed. The devices fabricated by this technique exhibited threshold currents as low as VCSELs on the original growth substrate. The effective thermal resistance did not increase even after the growth substrate was removed. © 2000 American Institute of Physics.