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Comment on “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon” [Appl. Phys. Lett. 75, 1279 (1999)]

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6 Author(s)
Venezia, V.C. ; Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Brown, R.A. ; Kalyanaraman, R. ; Haynes, T.E.
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Applied Physics Letters  (Volume:77 ,  Issue: 1 )