By Topic

Comment on “Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon” [Appl. Phys. Lett. 75, 1279 (1999)]

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
6 Author(s)
Venezia, V.C. ; Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill, New Jersey 07974 ; Brown, R.A. ; Kalyanaraman, R. ; Haynes, T.E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126906 

Published in:

Applied Physics Letters  (Volume:77 ,  Issue: 1 )