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Effect of current crowding on vacancy diffusion and void formation in electromigration

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4 Author(s)
Tu, K.N. ; Department of Materials Science and Engineering, UCLA, Los Angeles, California 90095-1595 ; Yeh, C.C. ; Liu, C.Y. ; Chih Chen

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.125915 

In multilevel interconnects, current crowding occurs whenever the current changes direction, such as when passing through a via. We propose that in current crowding, the current-density gradient can exert a driving force strong enough to cause excess vacancies (point defects) to migrate from high to low current-density regions. This leads to void formation in the latter. This is a key feature of electromigration-induced damage in very large scale integrated interconnects. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 8 )

Date of Publication:

Feb 2000

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