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Browse Journals & Magazines > Applied Physics Letters ...> Volume:76 Issue:8 Help

Epitaxial growth of AlN and Al0.5Ga0.5N layers on aluminum nitride substrates

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6 Author(s)
Schowalter, L.J. ; Department of Physics, Applied Physics, and Astronomy, Rensselaer Polytechnic Institute, Troy, New York 12180 ; Shusterman, Y. ; Wang, R. ; Bhat, I.
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High quality epitaxial AlN and AlxGa1-xN layers have been grown by organo-metallic vapor-phase epitaxy on single crystal a-face AlN substrates. Here we report the characterization of these layers using Rutherford backscattering/ion channeling spectroscopy, atomic force microscopy, double crystal x-ray diffraction, and preliminary electrical results. Ion channeling along the [112¯0] axis gave a minimum yield of 1.5% for an AlN layer and 2.2% for an Al0.5Ga0.5N, indicating excellent crystal quality. A resistivity of 20 Ω cm and a mobility of 20 cm2/V s was measured in a Si-doped, 1-μm-thick Al0.5Ga0.5N grown epitaxially on the AlN substrates. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:76 ,  Issue: 8 )

Date of Publication: Feb 2000

Page(s):
985 - 987
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.125914
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2000

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