By Topic

Anomalous features in the optical properties of Al1-xInxN on GaN grown by metal organic vapor phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yamaguchi, Shigeo ; High-Tech Research Center, Meijo University, 1-501 Shiogamaguchi Tempaku-ku, Nagoya, 468-8502, Japan ; Kariya, Michihiko ; Nitta, Shugo ; Takeuchi, Tetsuya
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have studied the optical properties of Al1-xInxN thin films grown on GaN by metal organic vapor phase epitaxy. X-ray diffraction analysis of ω and ω-2θ scans showed that both the compositional fluctuation and the degree of crystalline mosaicity increase with increasing x. While the energy positions of both the absorption edge and photoluminescence peak shift to a lower-energy region with increasing x, the linewidth of the photoluminescence spectra and the value of the absorption edge tail decrease. The Stokes shift also decreases with increasing x, following which both energy positions become 1.66 eV, which is smaller than the band gap of InN (1.9 eV). These anomalous features of the optical properties of Al1-xInxN might be affected by the absorption in the infrared region caused by the high electron concentration. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 7 )