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Polarity determination and atomic arrangements at a GaN/SiC interface using high-resolution image matching

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5 Author(s)
Stirman, J.N. ; Department of Physics and Astronomy, Arizona State University, Tempe, Arizona 85287-1504 ; Ponce, F.A. ; Pavlovska, A. ; Tsong, I.S.T.
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High-resolution electron microscopy and matching simulations were used to investigate structural features of a GaN/SiC heterointerface. The polarity of the (0001)-oriented SiC substrate was confirmed and it was shown that the polarity of the GaN epilayer corresponded to Ga-terminated (0001) growth. From measurement of average (11¯00) rather than (000l) interplanar spacings it was established that the GaN/SiC interface was abrupt to within one atomic plane. It was concluded that the atomic arrangements at the GaN/SiC interface most likely consisted of N bonded with Si, but with some Ga bonded to C in order to maintain charge balance. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 7 )