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Browse Journals & Magazines > Applied Physics Letters ...> Volume:76 Issue:7 Help

High-temperature characteristics of 1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well lasers grown by molecular-beam epitaxy

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4 Author(s)
Yang, X. ; Department of Electrical Engineering, Columbia University, New York, New York 10027 ; Heroux, J.B. ; Jurkovic, M.J. ; Wang, W.I.

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1.3 μm InGaAsN:Sb/GaAs multiple-quantum-well laser diodes have been grown by solid-source molecular-beam epitaxy using Sb as a surfactant. A low threshold of 1.1 kA/cm2 was achieved for broad-area laser diodes under pulsed operation at room temperature. High-temperature device characterization revealed characteristic temperatures (T0) of 92 and 54 K for operating temperatures below and above 75 °C, respectively, as well as a lasing-wavelength temperature dependence of 0.36 nm/ °C. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:76 ,  Issue: 7 )

Date of Publication: Feb 2000

Page(s):
795 - 797
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.125587
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Feb 2000

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