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Electrical characteristics of ultrathin gate oxide prepared by postoxidation annealing in ND3

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2 Author(s)
Kwon, Hyungshin ; Department of Materials Science and Engineering, Kwangju Institute of Science and Technology, Oryong-dong, Puk-gu, Kwangju, 500-712, Korea ; Hyunsang Hwang

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The electrical and reliability characteristics of ultrathin gate oxide, annealed in ND3 gas, have been investigated. Compared with a control oxide, which had been annealed in NH3, the ND3-nitrided oxide exhibits a significant reduction in charge trapping and interface-state generation. The improvement of electrical and reliability characteristics can be explained by the strong Si–D bond at the Si/SiO2 interface. This nitridation process of a gate dielectric using ND3 has considerable potential for future ultra-large-scale integration device applications. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 6 )