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Implantation damage effect on boron annealing behavior using low-energy polyatomic ion implantation

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4 Author(s)
Jin, Jian-Yue ; Texas Center for Superconductivity, University of Houston, Houston, Texas 77204 ; Liu, Jiarui ; van der Heide, Paul A.W. ; Chu, Wei-Kan

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.125821 

We have studied ion-implantation damage effects on boron clustering and transient enhanced diffusion (TED) by using polyatomic boron (Bn-, n=1–3) ion implantation with the same atomic boron dose and energy. This Bn- series implantation can produce different amounts of damage with the same boron as-implanted profile and same amount of excess interstitials, hence a net effect of implantation damage can be extracted. Secondary ion mass spectrometry measurements indicate that for 1 keV boron atomic energy implantation and 10 s 1050 °C rapid thermal annealing, B1- implantation has less TED and less boron–interstitial clustering than B2- and B3- implantation. A boron trapping peak at the SiO2/Si interface is also speculated since the amount of boron trapped is correlated to the size of implanted ions. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 5 )

Date of Publication:

Jan 2000

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