By Topic

Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Kamins, T.I. ; Hewlett-Packard Laboratories, Palo Alto, California 94304 ; Williams, R.Stanley ; Chen, Y. ; Chang, Y.-L.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Silicon “nanowires” can be formed by chemical vapor deposition of Si onto Si substrates on which nanometer-scale, Ti-containing islands have been grown. At the growth temperatures used, the Ti-containing islands remain solid and anchored to the substrate, while the Si nanowires grow out from the islands, which remain at their bases. The nanowire growth mechanism, therefore, differs from the usual vapor-liquid-solid process and provides a potential route for the formation of oriented Si nanostructures or semiconductor-metal-semiconductor structures compatible with Si integrated circuits. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 5 )