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Using the concept for nonvolatile memories recently proposed by K. Shum, J. Q. Zhou, W. Zhang, L. F. Zeng, and M. C. Tamargo [Appl. Phys. Lett. 71, 2487 (1997)], a promising nonvolatile memory device has been designed and demonstrated using a III–V semiconductor quantum structure. Preliminary data on the device’s stability and reliability reveals that further improvements are possible on the cycling endurance and retention time. © 2000 American Institute of Physics.
Published in:
Applied Physics Letters
(Volume:76
,
Issue:
4
)
Date of Publication: Jan 2000
- Page(s):
- 505 - 507
- ISSN :
- 0003-6951
- Digital Object Identifier :
- 10.1063/1.125802
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 18 June 2009
- Issue Date :
- Jan 2000
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