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Direct experimental observation of the local electronic structure at threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films

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10 Author(s)
Xin, Y. ; Department of Physics, University of Illinois at Chicago, Chicago, Illinois 60607-7059 ; James, E.M. ; Arslan, I. ; Sivananthan, S.
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The electronic structure of pure edge threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films has been studied directly by atomic resolution Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. Dislocation cores in n-type samples grown in N-rich conditions show no evidence for the high concentration of Ga vacancies predicted by previous theoretical calculations. Nitrogen K-edge spectra collected from edge dislocation cores show a sudden and significant increase in the intensity of the first fine-structure peak immediately above the edge onset compared to the bulk spectra. The origin of this increase is discussed. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 4 )