Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.125789
The electronic structure of pure edge threading dislocations in metalorganic vapor phase epitaxy grown wurtzite GaN thin films has been studied directly by atomic resolution Z-contrast imaging and electron energy loss spectroscopy in a scanning transmission electron microscope. Dislocation cores in n-type samples grown in N-rich conditions show no evidence for the high concentration of Ga vacancies predicted by previous theoretical calculations. Nitrogen K-edge spectra collected from edge dislocation cores show a sudden and significant increase in the intensity of the first fine-structure peak immediately above the edge onset compared to the bulk spectra. The origin of this increase is discussed. © 2000 American Institute of Physics.