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Improved interface properties of p-type 6HSiC/SiO2 system by NH3 pretreatment

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4 Author(s)
Xu, J.P. ; Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan, 430074, People’s Republic of China ; Lai, P.T. ; Chan, C.L. ; Cheng, Y.C.

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Effects of preoxidation NH3 treatment on p-type 6HSiC/SiO2 interface properties were investigated as compared to conventional thermally oxidized devices. It was found that NH3 treatment before oxidation can reduce the SiC/SiO2 interface states and fixed oxide charge. Furthermore, less shift of flatband voltage, and smaller increases of effective oxide charge and interface states during high-field stress were observed for the NH3 pretreated devices. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 3 )

Date of Publication:

Jan 2000

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