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Browse Journals & Magazines > Applied Physics Letters ...> Volume:76 Issue:24 Help

Strain relaxation mechanism for hydrogen-implanted Si1-xGex/Si(100) heterostructures

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7 Author(s)
Trinkaus, H. ; Institut für Festkörperforschung, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany ; Hollander, B. ; Rongen, St. ; Mantl, S.
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A mechanism of strain relief of H+ ion implanted and annealed pseudomorphic Si1-xGex/Si(100) heterostructures grown by molecular beam epitaxy is proposed and analyzed. Complete strain relaxation was obtained at temperatures as low as 800 °C and the samples appeared free of threading dislocations within the SiGe layer to the limit of transmission electron microscopy analysis. In our model, H filled nanocracks are assumed to generate dislocation loops, which glide to the interface where they form strain relieving misfit segments. On the basis of this assumption, the conditions for efficient strain relaxation are discussed. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:76 ,  Issue: 24 )

Date of Publication: Jun 2000

Page(s):
3552 - 3554
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.126704
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2000

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