Micro-Raman and cathodoluminescence studies of epitaxial laterally overgrown GaN with tungsten masks: A method to map the free-carrier concentration of thick GaN samples

Cathodoluminescence (CL) and micro-Raman spectroscopy were applied to study microscopically the optical and structural properties of two epitaxial-laterally overgrown GaN structures with tungsten masks in <11_00> and <112_0> direction, respectively. A free-carrier concentration higher than 10¹⁹ cm^-3 was observed right above the masks, leading to a gradient in free-carrier concentration over the whole layer thickness. We used the normalized longitudinal-optical-phonon intensity and the broad band around 650 cm^-1 as a measure for the free-electron concentration, which is a promising method to determine the free-carrier concentration justified by the good correlation with CL results. © 2000 American Institute of Physics.