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High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

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6 Author(s)
Mukai, K. ; Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan ; Nakata, Y. ; Otsubo, Koji ; Sugawara, M.
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This letter reports on the high characteristic temperature of InGaAs/GaAs quantum-dot lasers at room temperature. Self-assembled quantum dots were grown using low-growth-rate molecularbeam epitaxy, and continuous-wave lasing occurred at the dot ground level of 1.26 μm at 25 °C. The characteristic temperature of the threshold currents was 120 K, and ground-level lasing was observed up to 100 °C. Comparing the lasing performances and the spontaneous emission spectra with those of 1.3 μm emission dots, we found that the large volume density, deep potential, and high quantum efficiency were key points for improving the temperature characteristics. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 23 )