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Evaluation of niobium effects on the longitudinal piezoelectric coefficients of Pb(Zr, Ti)O3 thin films

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5 Author(s)
Haccart, T. ; LAMAC–Université de Valenciennes et du Hainaut–Cambrésis, CRITT–Z.I. du Champ de l’Abbesse, 59600 Maubeuge, France ; Cattan, E. ; Remiens, D. ; Hiboux, S.
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Pb(Zr, Ti)O3 (PZT) and Pb(Zr, Ti, Nb)O3 (PNZT) thin films have been deposited on platinized silicon substrates by sputtering followed by a postannealing treatment. The Nb concentration in the films varied between 1 and 7 at. % with increments of 1 at. %. The effects of Nb modification on the piezoelectric response, and particularly on the longitudinal piezoelectric coefficient d33, have been investigated. The introduction of Nb enhances the dielectric and piezoelectric properties of the PZT films. The best doping level ranges from 1 up to 2 at. %. The relative dielectric constant εr, reaches 1100, and the maximum value of d33 is equal to 115 pm/V for a 1 at. % Nb-doped PZT in comparison to 820 and 55 pm/V for an undoped PZT film. PNZT films are suitable for microsystem applications. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 22 )

Date of Publication:

May 2000

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