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Comparison of Si doping effect in optical properties of GaN epilayers and InxGa1-xN quantum wells

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5 Author(s)
Oh, Eunsoon ; Photonics Laboratory, Samsung Advanced Institute of Technology, P.O. Box 111, Suwon, 440-600 Korea ; Sone, Cheolsoo ; Nam, Okhyun ; Park, Hyeongsoo
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Micro-photoluminescence (PL) spectra of Si-doped GaN epilayers and three-period In0.1Ga0.9N/In0.02Ga0.98N:Si quantum-well (QW) structures were studied and compared with macro-PL spectra. The shift of the macro-PL peak with increasing Si concentration was found to be similar to that with increasing excitation density in both GaN:Si and InxGa1-xN QWs. Also, it was observed that the macro-PL intensity increased with increasing Si concentration in GaN:Si and InxGa1-xN QWs, but the micro-PL intensity was independent of doping concentration. These results indicate that the changes of PL spectra with Si doping are mainly due to the increase of carriers. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 22 )