By Topic

Time-resolved photoluminescence study of isoelectronic In-doped GaN films grown by metalorganic vapor-phase epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Huang, H.Y. ; Department of Electrophysics, National Chiao Tung University, Hsinchu, 300, Taiwan, Republic of China ; Shu, C.K. ; Lin, W.C. ; Chuang, C.H.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Time-resolved photoluminescence spectra were used to characterize isoelectronically doped GaN:In films. Our results indicate that the recombination lifetime of the donor-bound-exciton transition of undoped GaN exhibits a strong dependence on temperature. When In is doped into the film, the recombination lifetime decreases sharply from 68 to 30 ps, regardless of the measured temperature and In source flow rate. These observations might be related to the isoelectronic In impurity itself in GaN, which creates shallow energy levels that predominate the recombination process. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 22 )