Single-phase paraelectric ZrTiO4 thin films were synthesized at various temperatures using direct-current magnetron reactive sputtering. The dielectric constants (ε) and dielectric losses (tan δ) of as-deposited and annealed films were measured in the 100 kHz range using a Pt upper electrode and a phosphorous-doped Si (100) bottom electrode. Data showed that as the deposition temperature increased, the dielectric losses decreased, while the dielectric constants did not change much. Similar trends for dielectric losses were observed after annealing at 800 °C. These results of dielectric losses correlated well with strains in ZrTiO4 thin films, analyzed from x-ray diffraction peak widths at various scattering angles. © 2000 American Institute of Physics.