By Topic

Correlation between strain and dielectric properties in ZrTiO4 thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Taeseok Kim ; School of Materials Science and Engineering, Seoul National University, Seoul 151-742, Korea ; Oh, Jeongmin ; Park, Byungwoo ; Sun Hong, Kug

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Single-phase paraelectric ZrTiO4 thin films were synthesized at various temperatures using direct-current magnetron reactive sputtering. The dielectric constants (ε) and dielectric losses (tan δ) of as-deposited and annealed films were measured in the 100 kHz range using a Pt upper electrode and a phosphorous-doped Si (100) bottom electrode. Data showed that as the deposition temperature increased, the dielectric losses decreased, while the dielectric constants did not change much. Similar trends for dielectric losses were observed after annealing at 800 °C. These results of dielectric losses correlated well with strains in ZrTiO4 thin films, analyzed from x-ray diffraction peak widths at various scattering angles. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 21 )