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Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells

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4 Author(s)
Zeng, K.C. ; Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 ; Li, J. ; Lin, J.Y. ; Jiang, H.X.

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A set of GaN/AlxGa1-xN(x≈0.2) multiple quantum wells (MQWs) with well widths, Lw, varying from 6 to 48 Å has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminescence spectroscopy has been employed to probe the well-width dependence of the quantum efficiencies (QE) of these MQWs. Our results have shown that these GaN/AlGaN MQW structures exhibit negligibly small piezoelectric effects and hence enhanced QE. Furthermore, GaN/AlxGa1-xN MQWs with Lw between 12 and 42 Å were observed to provide the highest QE, which can be attributed to the reduced nonradiative recombination rate as well as the improved quantum-well quality. The decreased QE in GaN/AlxGa1-xN MQWs with Lw≪12 Å is due to the enhanced carrier leakage to the underlying GaN epilayers, while the decreased QE in MQWs with Lw≫42 Å is associated with an increased nonradiative recombination rate as Lw approaching the critical thickness of MQWs. The implications of our results on device applications are also discussed. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 21 )

Date of Publication:

May 2000

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