Cart (Loading....) | Create Account
Close category search window

Well-width dependence of the quantum efficiencies of GaN/AlxGa1-xN multiple quantum wells

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Zeng, K.C. ; Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 ; Li, J. ; Lin, J.Y. ; Jiang, H.X.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

A set of GaN/AlxGa1-xN(x≈0.2) multiple quantum wells (MQWs) with well widths, Lw, varying from 6 to 48 Å has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminescence spectroscopy has been employed to probe the well-width dependence of the quantum efficiencies (QE) of these MQWs. Our results have shown that these GaN/AlGaN MQW structures exhibit negligibly small piezoelectric effects and hence enhanced QE. Furthermore, GaN/AlxGa1-xN MQWs with Lw between 12 and 42 Å were observed to provide the highest QE, which can be attributed to the reduced nonradiative recombination rate as well as the improved quantum-well quality. The decreased QE in GaN/AlxGa1-xN MQWs with Lw≪12 Å is due to the enhanced carrier leakage to the underlying GaN epilayers, while the decreased QE in MQWs with Lw≫42 Å is associated with an increased nonradiative recombination rate as Lw approaching the critical thickness of MQWs. The implications of our results on device applications are also discussed. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 21 )

Date of Publication:

May 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.