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Epitaxial growth of non-c-oriented SrBi2Nb2O9 on (111) SrTiO3

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6 Author(s)
Lettieri, J. ; Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 ; Zurbuchen, M.A. ; Jia, Y. ; Schlom, D.G.
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Epitaxial SrBi2Nb2O9 thin films have been grown with a (103) orientation on (111) SrTiO3 substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO3 electrodes enabled the electrical properties of these (103)-oriented SrBi2Nb2O9 films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 μC/cm2, and the dielectric loss was 2.5% for a 0.5-μm-thick film. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 20 )

Date of Publication:

May 2000

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