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Highly electrically conductive indium–tin–oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition

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6 Author(s)
Ohta, Hiromichi ; Hosono Transparent ElectroActive Materials, ERATO, Japan Science and Technology Corporation, KSP C-1232, 3-2-1, Sakado, Takatsu-ku, Kawasaki-shi, 213-0012, Japan ; Orita, Masahiro ; Hirano, Masahiro ; Tanji, Hiroaki
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Highly electrically conductive indium–tin–oxide thin films were epitaxially grown on an extremely flat (100) surface of yttria-stabilized zirconia single-crystal substrates at a substrate temperature of 600 °C by a pulsed-laser deposition technique. A resistivity down to 7.7×10-5 Ω cm was reproducibly obtained, maintaining optical transmission exceeding 85% at wavelengths from 340 to 780 nm. The carrier densities of the films were enhanced up to 1.9×1021cm-3, while the Hall mobility showed a slight, almost linear, decrease from 55 to 40 cm2 V-1 s-1 with increasing SnO2 concentration. The low resistivity is most likely the result of the good crystal quality of the films. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 19 )