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Interface structures in GaAs wafer bonding: Application to compliant substrates

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5 Author(s)
Vanfleet, R.R. ; School of Applied and Engineering Physics, Cornell University, Ithaca, New York 14853 ; Shverdin, M. ; Silcox, J. ; Zhu, Z.H.
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The interface of direct bonded GaAs to GaAs has been studied by scanning transmission electron microscopy and electron energy loss spectroscopy. Voids are seen along the boundary with most being partially filled with a gallium particle. Two general sizes of voids are seen. The large voids (d∼45 nm) are distributed in an approximately linear relationship and the smaller (d∼12 nm) randomly. In compliant substrates, one of the layers is made thin (≤10 nm) and twisted ∼45°. The larger voids often extend past this thin compliant layer, but no evidence of granularity of the epitaxial film is observed. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 19 )

Date of Publication:

May 2000

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