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Browse Journals & Magazines > Applied Physics Letters ...> Volume:76 Issue:18 Help

Conduction band offset in InAs/GaAs self-organized quantum dots measured by deep level transient spectroscopy

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4 Author(s)
Ghosh, S. ; Solid State Electronics Laboratory, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109-2122 ; Kochman, B. ; Singh, J. ; Bhattacharya, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126411 

The heterostructure conduction band offset, ΔEc, in InAs/GaAs self-organized quantum dots has been measured by deep level transient spectroscopy. Measurements were made with Au–Al0.18Ga0.82As Schottky diodes in which the multilayer dots are embedded in the ternary layer. The estimated value of the band offset ΔEc=341±30 meV. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:76 ,  Issue: 18 )

Date of Publication: May 2000

Page(s):
2571 - 2573
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.126411
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2000

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