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Origin of the nonradiative <112¯0> line defect in lateral epitaxy-grown GaN on SiC substrates

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5 Author(s)
Hacke, P. ; Fujitsu Laboratories Ltd., 10-1 Morinosato-Wakamiya, Atsugi 243-0197, Japan ; Domen, K. ; Kuramata, A. ; Tanahashi, T.
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Nonradiative line defects are observed by cathodoluminescence in <2¯110> directions in [11¯00]-oriented GaN stripes grown by lateral epitaxy on SiC substrates. Using transmission electron microscopy, the origin is determined to be principally screw dislocations. We observe the screw dislocations in vertically [0001] stacked configurations and forming dislocation loops and half loops contained in two of the three planes of the form {11¯00}. The dislocations are believed to serve to relax the anisotropic stresses experienced in the lateral epitaxy-overgrown stripes. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 18 )