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InAs(PSb)-based “W” quantum well laser diodes emitting near 3.3 μm

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15 Author(s)
Joullie, A. ; CEM2, UMR-CNRS n°5507, Université de Montpellier II, Sciences et Techniques du Languedoc, Case 067, F-34095 Montpellier Cedex 05, France ; Skouri, E.M. ; Garcia, M. ; Grech, P.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126388 

Mid-infrared laser diodes with an active region consisting of five “W” InAsSb/InAsP/InAsSb/InAsPSb quantum wells and broad InAsPSb waveguide were fabricated by metalorganic vapor phase epitaxy on InAs substrates. Laser emission was demonstrated at 3.3 μm up to 135 K from asymmetrical structures having n-type InAsPSb and p-type InPSb cladding layers. The devices operated in pulsed regime at 3.3 μm, with a lowest threshold current density of 120 A/cm2 at 90 K, and an output power efficiency of 31 mW/facet/A. The characteristic temperature was 35 K. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 18 )

Date of Publication:

May 2000

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