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Large, nitrogen-induced increase of the electron effective mass in InyGa1-yNxAs1-x

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12 Author(s)
Skierbiszewski, C. ; UNIPRESS, Polish Academy of Sciences, ul. Sokolowska 29, 01-142 Warsaw, Poland ; Perlin, P. ; Wisniewski, P. ; Knap, W.
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A dramatic increase of the conduction band electron mass in a nitrogen-containing III–V alloy is reported. The mass is found to be strongly dependent on the nitrogen content and the electron concentration with a value as large as 0.4m0 in In0.08Ga0.92As0.967N0.033 with 6×1019cm-3 free electrons. This mass is more than five times larger than the electron effective mass in GaAs and comparable to typical heavy hole masses in III–V compounds. The results provide a critical test and fully confirm the predictions of the recently proposed band anticrossing model of the electronic structure of the III–N–V alloys. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 17 )

Date of Publication:

Apr 2000

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