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Browse Journals & Magazines > Applied Physics Letters ...> Volume:76 Issue:16 Help

Room-temperature Al single-electron transistor made by electron-beam lithography

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3 Author(s)
Pashkin, Y.A. ; Nakamura, Y. ; Tsai, J.S.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126313 

We present a lithographically made Al single-electron transistor that shows gate modulation at room temperature. The temperature dependence of the modulation agrees with the orthodox theory, however, energy-level quantization in a tiny metallic island affects the device characteristics below 30 K. The charge-equivalent noise of the device at 300 K was measured to be ∼4×10-2 e/Hz1/2 at 1 Hz and is expected to be 1000 times lower in the white-noise regime at higher frequencies. © 2000 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:76 ,  Issue: 16 )

Date of Publication: Apr 2000

Page(s):
2256 - 2258
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.126313
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Apr 2000

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