Distinctly different thermal decomposition pathways of ultrathin oxide layer on Ge and Si surfaces

The thermal decomposition pathway of an ultrathin oxide layer on Ge(100) and Si(100) surfaces is examined by synchrotron radiation photoelectron spectroscopy and ultraviolet photoelectron spectroscopy with helium I radiation. The as-prepared oxide layer consists of a mixture of oxides, namely, suboxides and dioxides, on both the surfaces. Upon annealing, the oxide layers decompose and desorb as monoxides. However, we find that the decomposition pathways are different from each other. On annealing Ge oxides, GeO₂ species transform to GeO and remain on the surface and desorb at ≫420 °C. In contrast, annealing of Si oxides results in the transformation of SiO to SiO₂ up to temperatures (∼780 °C) close to the desorption. At higher temperatures, SiO₂ decomposes and desorbs, implying a reverse transformation to volatile SiO species. © 2000 American Institute of Physics.