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Plasma-activated chemical vapor deposition of bismuth-substituted iron garnets for magneto-optical data storage

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2 Author(s)
E. V. Anoikin ; Dept. of Chem. Eng., Carnegie Mellon Univ., Pittsburgh, PA, USA ; P. J. Sides

Polycrystalline garnet thin films were obtained on glass substrates by plasma-activated chemical vapor deposition followed by annealing at 670°C. The single mixed precursor approach was used to achieve vaporization and transport of low-vapor-pressure powdered metalorganic precursors to a plasma reactor. Bi, Ga-substituted dysprosium iron garnet film showed a square Faraday hysteresis loop with a rotation of ~2 deg/μm at 633 nm wavelength and low surface roughness of ~2 nm, which are favorable properties for high-density magneto-optical data storage

Published in:

IEEE Transactions on Magnetics  (Volume:31 ,  Issue: 6 )