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Improved contact performance of GaN film using Si diffusion

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5 Author(s)
Lin, C.F. ; Department of Electronics Engineering and Institute of Electronics and Semiconductor Research Center, National Chiao Tung University, Hsinchu 30049, Taiwan, Republic of China ; Cheng, H.C. ; Chi, G.C. ; Bu, C.J.
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In this letter, we investigate a metalization process for reducing the contact resistance on undoped GaN layers. The Si metal source was diffused successfully into the GaN films by using SiOx/Si/GaN/Al2O3 structures. By using a high-temperature annealing process, we diffused and activated the Si atoms into the GaN film. This caused a heavy doped n-type GaN layer to be formed near the GaN surface. Under high temperatures, such as a diffusion process at 1000 °C, the as-deposited Ni/Al/Ti contact had good ohmic properties and a low specific contact resistivity c) of 1.6×10-3 Ω cm2. Rapid thermal annealing the contact at 800 °C for 30 s caused the ρc to decrease rapidly to 5.6×10-7 Ω cm2. The Ni/Al/Ti contact characteristics on the GaN films diffused at various temperatures are also discussed. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 14 )