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Dense arrays of ordered GaAs nanostructures by selective area growth on substrates patterned by block copolymer lithography

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8 Author(s)
Li, R.R. ; Compound Semiconductor Laboratory, Department of Electrical Engineering-Electrophysics, University of Southern California, Los Angeles, California 90089 ; Dapkus, P.D. ; Thompson, M.E. ; Jeong, W.G.
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GaAs has been selectively grown in a hexagonally ordered array of nanometer-scale holes with a density as high as ∼1011/cm2 by metalorganic chemical vapor deposition. This array of holes was created using block copolymer lithography, in which a thin layer of diblock copolymer was used as an etching mask to make dense holes in a 15-nm-thick SiNx film. These selectively grown nanoscale features are estimated to be 23 nm in diameter with narrow lateral size and height distributions as characterized by field-emission scanning electron microscopy and tapping mode atomic force microscopy. The narrow size distribution and uniform spatial position of the nanoscale dots we report offer potential advantages over self-assembled dots grown by the Stranski–Krastanow mode. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 13 )