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Fabrication of microstructured magnetic tunneling valve junction

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4 Author(s)
Matsuyama, K. ; Dept. of Electr. Eng., Kyushu Univ., Fukuoka, Japan ; Asada, H. ; Miyoshi, H. ; Taniguchi, K.

A microstructured magnetic tunneling valve junction was fabricated with a photolithographic technique. The base and counter electrodes of 78Ni-Fe and Co were deposited by conventional rf sputtering. Rf sputter oxidation was applied to form the tunneling barrier on the intermediate Al surface; typical sputtering parameters used in the experiments were rf power of 0.4 w/cm2 and oxygen pressure of 50 mTorr. The magnetoresistance ratio of 0.2% (resistance R=4.1 Ω, ΔR=8 mΩ) was observed at room temperature in the microstructured 40×40 μm2 junction

Published in:

Magnetics, IEEE Transactions on  (Volume:31 ,  Issue: 6 )

Date of Publication:

Nov 1995

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