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Theoretical analysis of filamentation and fundamental-mode operation in InGaN quantum well lasers

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3 Author(s)
Chow, W.W. ; Sandia National Laboratories, Albuquerque, New Mexico 87185-0601 ; Amano, H. ; Akasaki, I.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.126123 

Filamentation and, consequently, output beam quality in InGaN quantum-well lasers are found to be strong functions of quantum-well width because of the interplay of quantum-confined Stark effect and many-body interactions. For an In0.2Ga0.8N/GaN gain medium, the antiguiding factor in a thick 4 nm quantum well is considerably smaller than that for a narrow 2 nm one. As a result, lasers with the thicker quantum well maintain fundamental-mode operation with wider stripe widths and at significantly higher excitation levels. © 2000 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:76 ,  Issue: 13 )

Date of Publication:

Mar 2000

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