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Empirical relationship between low-frequency drain current noise and grain-boundary potential barrier height in high-temperature-processed polycrystalline silicon thin-film transistors

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7 Author(s)
Angelis, C.T. ; Department of Physics, University of Thessaloniki, 54006 Thessaloniki, Greece ; Dimitriadis, C.A. ; Farmakis, F.V. ; Brini, J.
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The relationship between low-frequency drain current noise spectral density SI and grain-boundary potential barrier height Vb is investigated in high-temperature-processed polycrystalline silicon thin-film transistors. It is demonstrated that a general empirical relationship exists between SI and Vb indicating that the noise sources are located at the grain boundaries. The implications of the obtained relationship between SI and Vb from the practical viewpoint are discussed. © 2000 American Institute of Physics.

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Applied Physics Letters  (Volume:76 ,  Issue: 1 )