By Topic

Interstitial-type defects away from the projected ion range in high energy ion implanted and annealed silicon

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
7 Author(s)
Kogler, R. ; Forschungszentrum Rossendorf, D-01314 Dresden, Germany ; Peeva, A. ; Anwand, W. ; Brauer, G.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Defects in high energy ion implanted silicon have been investigated, especially in the depth range around half of the projected ion range RP/2 after annealing at temperatures between 700 and 1000 °C. Preferable trapping of metals just in this depth range proves the existence of defects there. No vacancy-like defects could be detected by variable energy positron annihilation spectroscopy after annealing at temperatures T≫800 °C. Instead, interstitial-type defects were observed in the RP/2 region using cross section transmission electron microscopy of a specimen prepared under special conditions. The results indicate the presence of small interstitial agglomerates at RP/2 which remain after high temperature annealing. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 9 )