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Influence of the laser fluence on the electrical properties of pulsed-laser-deposited SrBi2Ta2O9 thin films

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6 Author(s)
Bu, S.D. ; Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea ; Park, B.H. ; Kang, B.S. ; Kang, S.H.
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Polycrystalline SrBi2Ta2O9 ferroelectric thin films were grown on Pt/Ti/SiO2/Si substrates using pulsed-laser deposition. By adjusting the laser fluence, we could successfully control remnant polarization of the films. In a narrow fluence range of 1.0–1.5 J/cm2, films with large remnant polarizations (as high as 18.7 μC/cm2) could be obtained. The choice of an optimal laser fluence was found to be very important to control electrical properties of the films. From electron-probe microanalysis, it was demonstrated that the Bi content is closely related with the remnant polarization. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 8 )

Date of Publication:

Aug 1999

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