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Nucleation layer microstructure, grain size, and electrical properties in GaN grown on a-plane sapphire

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5 Author(s)
Twigg, M.E. ; Electronics Science and Technology Division, Naval Research Laboratory, Washington, DC 20375-5320 ; Henry, R.L. ; Wickenden, A.E. ; Koleske, D.D.
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We have investigated the microstructural origins of center-to-edge differences in the electrical properties of GaN films grown on a-plane sapphire via metal–organic vapor-phase epitaxy. Using cross-sectional transmission electron microscopy, we have observed that the grain size at the wafer edge is approximately 1 μm, whereas the grain size in the wafer center ranges from 0.1 to 0.5 μm. The smaller grain size at the wafer center is traced to a higher density of extended defects in the AlN nucleation layer: defects which, in turn, act as nucleation sites for GaN grain growth. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 5 )

Date of Publication:

Aug 1999

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