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High-resistance buried layers by MeV Fe implantation in n-type InP

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7 Author(s)
Gasparotto, A. ; INFM and Dipartimento di Fisica, Università di Padova, Via Marzolo 8, 35131 Padova, Italy ; Carnera, A. ; Paccagnella, A. ; Fraboni, B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.124476 

We performed 2 MeV Fe implantation at a temperature of 200 °C on n-type InP substrates with different background doping concentrations. We studied the activation of Fe atoms as compensating deep acceptors and the electrical properties of the implanted layers. Simulation of the current–voltage characteristics coupled with secondary ion mass spectrometry depth profiling was used to extract important parameters such as the activated Fe fraction, the resistivity, and the thickness of the compensated layers. Our results show that resistivities of the order of 107 Ω cm can also be obtained for background doping concentrations higher than 1×1018cm-3, with active Fe concentration well above the known solid solubility limit. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 5 )

Date of Publication:

Aug 1999

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