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Subpicosecond spin relaxation in GaAsSb multiple quantum wells

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6 Author(s)
Hall, K.C. ; Department of Physics, University of Toronto, Toronto, Ontario M5S 1A7, Canada ; Leonard, S.W. ; van Driel, H.M. ; Kost, A.R.
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Spin relaxation times in GaAsxSb1-x quantum wells are measured at 295 K using time-resolved circular dichroism induced by 1.5 μm, 100 fs pulses. Values of 1.03 and 0.84 ps are obtained for samples with x=0 and 0.188, respectively. These times are ≫5 times shorter than those in InGaAs and InGaAsP wells with similar band gaps. The shorter relaxation times are attributed to the larger spin-orbit conduction-band splitting in the Ga(As)Sb system, consistent with the D’yakonov–Perel theory of spin relaxation [M. I. D’yakonov and V. I. Perel, Sov. Phys. JETP 38, 177 (1974)]. Our results indicate the feasibility of engineering an all-optical, polarization switch at 1.5 μm with response time ≪250 fs. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 26 )