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Growth of Si/3C–SiC/Si(100) heterostructures by pulsed supersonic free jets

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4 Author(s)
Ikoma, Y. ; Department of Materials Science and Engineering, Kyushu University, Hakozaki, Fukuoka 812-8581, Japan ; Endo, T. ; Watanabe, F. ; Motooka, T.

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We have investigated the epitaxial growth of multilayer structures of Si/3C–SiC/Si(100) by pulsed supersonic free jets of methylsilane (CH3SiH3) for SiC growth and trisilane (Si3H8) for Si growth. Epitaxial Si layers were obtained only on very thin (≈3 nm) 3C–SiC epitaxial layers, while polycrystalline Si was grown on thicker 3C–SiC layers. It was also found that the transition regions with a thickness of ≈1 nm existed at the interface between epitaxial 3C–SiC and Si layers by high-resolution transmission electron microscopy observation. These results suggest that the surface roughness and thickness of the 3C–SiC layer play an important role for epitaxial growth of Si. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 25 )