Cart (Loading....) | Create Account
Close category search window

High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Damlencourt, J.F. ; Ecole Centrale de Lyon, LEOM (UMR CNRS 5512), 69621 Ecully, Cedex, France ; Leclercq, J.L. ; Gendry, M. ; Regreny, P.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP substrates (0.81% misfit), with high structural and high optoelectronic quality at an operating wavelength of ∼2.0 μm. Full relaxation is achieved, using the paramorphic approach, by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 23 )

Date of Publication:

Dec 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.