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High-quality fully relaxed In0.65Ga0.35As layers grown on InP using the paramorphic approach

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5 Author(s)
Damlencourt, J.F. ; Ecole Centrale de Lyon, LEOM (UMR CNRS 5512), 69621 Ecully, Cedex, France ; Leclercq, J.L. ; Gendry, M. ; Regreny, P.
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Thin and thick fully relaxed In0.65Ga0.35As layers have been grown on InP substrates (0.81% misfit), with high structural and high optoelectronic quality at an operating wavelength of ∼2.0 μm. Full relaxation is achieved, using the paramorphic approach, by growing the In0.65Ga0.35As layers lattice matched to an InAs0.25P0.75 seed membrane of predetermined lattice parameter. The InAs0.25P0.75 layer was originally grown pseudomorphically strained on the InP substrate before being separated and elastically relaxed using surface micromachining. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 23 )

Date of Publication:

Dec 1999

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