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Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser

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5 Author(s)
Park, G. ; Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, Texas 78712-1084 ; Shchekin, O.B. ; Csutak, Sebastion ; Huffaker, D.L.
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Room-temperature continuous-wave operation of a 1.3 μm quantum dot laser is reported. The threshold current for a single layer active region with p–up mounting is only 4.1 mA with a threshold current density of 45 A/cm2. The minimum room temperature threshold current density is 25 A/cm2 for pulsed operation. Cryogenic and temperature dependent measurements are performed on broad-area lasers fabricated from the same active material. At 4 K the broad-area threshold current density for uncoated facets is 6 A/cm2. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 21 )