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Quantum-well infrared photodetectors with digital graded superlattice barrier for long-wavelength and broadband detection

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5 Author(s)
Lee, Jung-Hee ; Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 ; Li, Sheng S. ; Tidrow, M.Z. ; Liu, W.K.
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We report two high-performance quantum-well infrared photodetectors (QWIPs) using GaAs/AlGaAs digital graded superlattice barriers and InGaAs quantum wells for long-wavelength infrared and broadband (BB) detection. The compositionally digital graded superlattice barriers (DGSLBs) of the QWIP structures were grown using GaAs/AlGaAs digital graded superlattices to form a staircase-like composition-graded barrier layer without adjustment of the source temperature (510 °C) and the AlGaAs composition (15% Al). In the BB DGSLB QWIP, a broad spectral response from 7 to 16 μm wavelength range was obtained under positive bias condition, while a normal spectral response with peak wavelength at 11 μm was obtained under the negative bias condition. In addition, a double-barrier (DB) DGSLB QWIP structure adding a thin (20 Å) undoped Al0.15Ga0.85As on each side of the InGaAs quantum well to form a DB structure for the confinement of electron wave functions in the E4 states was also studied. A peak responsivity of 3 A/W was obtained at Vb=1 V, T=35 K, and λp=12 μm, and normal spectral response was observed in this device. © 1999 American Institute of Physics.

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Applied Physics Letters  (Volume:75 ,  Issue: 20 )