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Measurement of AlInAsSb/GaInAsSb heterojunction band offset by photoluminescence spectroscopy

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9 Author(s)
Chang, J.R. ; Department of Electrical Engineering, National Cheng Kung University, Tainan 701, Taiwan, Republic of China ; Su, Y.K. ; Lin, C.L. ; Wu, K.M.
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We have grown unstrained Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 multiple-quantum-well (MQW) structures on InP substrates by metalorganic vapor phase epitaxy. Low-temperature photoluminescence was performed for these MQW structures. By comparing the luminescence peak energies with the theoretical calculations, we estimated the conduction-band offset ratio to be 0.75±0.10 for the Al0.66In0.34As0.85Sb0.15/Ga0.64In0.36As0.84Sb0.16 heterostructure. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 2 )

Date of Publication:

Jul 1999

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