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In enrichment in (In,Ga)As/GaAs quantum dots studied by high-resolution x-ray diffraction and pole figure analysis

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4 Author(s)
Krost, A. ; Institut für Experimentelle Physik, Otto-von-Guericke Universität Magdeburg, D-391016 Magdeburg, Germany ; Blasing, J. ; Heinrichsdorff, F. ; Bimberg, D.

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We report on an x-ray study of a 15×(InAs/InGaAs/GaAs) multiquantum dot stack grown by metal organic chemical vapor deposition using high-resolution x-ray diffraction and pole figure analysis. No direct signal from the quantum dots is found by the high-resolution techniques. All rocking curves on different symmetric and asymmetric Bragg reflections can be simulated within the framework of dynamical theory assuming a perfect tetragonally distorted InAs/InGaAs/GaAs multiquantum well system. The analysis of the diffuse scattering intensity in the vicinity of the (113) reflection in the symmetric scattering geometry, however, reveals a signal from the quantum dots. The quantum dots consist of nearly pure InAs, whereas the mean In concentration in the wetting layer is only 43% indicating a strong In diffusion during the Stranski–Krastanow formation process. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 19 )