Cart (Loading....) | Create Account
Close category search window

Use of x-ray microbeams for cross-section depth profiling of MeV ion-implantation-induced defect clusters in Si

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Yoon, Mirang ; Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 ; Larson, B.C. ; Tischler, J.Z. ; Haynes, T.E.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We have used submicron-resolution synchrotron x-ray beams to study the size, type, and depth distribution of ion-implantation-induced defect clusters in Si. A 0.65 μm resolution x-ray beam, generated using Fresnel zone plate focusing optics, was used to study (001)-oriented Si implanted at 300 °C with 10 MeV Si ions. Diffuse scattering measurements were made near the (220) Bragg reflection, as a function of depth on a (110) cross-sectioned sample, with a 0.65 μm depth resolution. The microbeam focusing optics and the depth-resolved scattering measurements are discussed, and an analysis of the intensity and lineshape of the diffuse scattering is presented in terms of existing models of vacancy and interstitial clusters in Si. © 1999 American Institute of Physics.

Published in:

Applied Physics Letters  (Volume:75 ,  Issue: 18 )

Date of Publication:

Nov 1999

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.