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Browse Journals & Magazines > Applied Physics Letters ...> Volume:75 Issue:18 Help

In situ high-resolution transmission electron microscopy of direct bonding processes between silicon tips with oxide surfaces at room temperature

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2 Author(s)
Kizuka, Tokushi ; Department of Applied Physics, School of Engineering, Nagoya University, Nagoya, 464-8603 JapanResearch Center for Advanced Waste and Emission Management, Nagoya University, Nagoya, 464-8603 JapanPrecursory Research for Embryonic Science and Technology, Japan Science and Technology Corporation, Nagoya, 464-8603 Japan ; Hosoki, Kazue

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.125135 

Nanometer-sized silicon (Si) tips were mechanically bonded and retracted by piezo driving inside a high-resolution transmission electron microscope. The process was directly observed in situ at a spatial resolution of 0.2 nm. It was found that crystalline-Si/amorphous-Si oxide/crystalline-Si boundaries were produced by contact at room temperature. The deformation and strength of the boundaries were investigated. © 1999 American Institute of Physics.

Published in:
Applied Physics Letters  (Volume:75 ,  Issue: 18 )

Date of Publication: Nov 1999

Page(s):
2743 - 2745
ISSN :
0003-6951
Digital Object Identifier :
10.1063/1.125135
Date of Current Version :
18 June 2009
Issue Date :
Nov 1999

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